2sd1767 / 2SD1859 transistors medium power transistor (80v, 0.7a) 2sd1767 / 2SD1859 ! ! ! ! features 1) high breakdown voltage, bv ceo =80v, and high current, i c =0.7a. 2) complements the 2sb1189 / 2sb1238. ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 80 80 5 0.7 2 1 150 ? 55~ + 150 unit v v v a(dc) 1 a(pulse) 0.5 ? 3 ? 2 ? 1 2SD1859 2sd1767 w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 pw = 10ms, duty = 1/2 ? 2 when mounted on a 40 40 0.7 mm ceramic board. ? 3 printed circuit board 1.7 mm thick, collector plating 1cm 2 or larger. ! ! ! ! packaging specifications and h fe type 2sd1767 mpt3 pqr dc ? t100 1000 2SD1859 atv qr ? tv2 2500 ? denot es h fe package h fe marking code basic ordering unit (pieces) ! ! ! ! external dimensions (units : mm) (1) emitter (2) collector (3) base 0.45 1.05 taping specifications 0.5 ( 1 ) 0.65max. 2.54 ( 2 ) 2.54 ( 3 ) 6.8 1.0 14.5 0.9 4.4 2.5 2sd1767 rohm : mpt3 eiaj : sc-62 2SD1859 rohm : atv (1) base (2) collector (3) emitter 1.5 0.4 1.5 0.4 1.6 0.5 3.0 0.4 1.5 ( 3 ) 4.5 ( 1 ) ( 2 ) 0.5 4.0 2.5 1.0 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t cob 80 80 5 ? ? ? ? ? ? ? ? ? ? 0.2 120 10 ? ? ? 0.5 0.5 0.4 ? ? v v v a a v mhz pf i c = 50 a i c = 2ma i e = 50 a v cb = 50v v eb = 4v h fe 82 120 2sd1767 2SD1859 ? ? 390 390 ? ? v ce /i c = 3v/0.1a i c /i b = 500ma/50ma v ce = 10v, i e =? 50ma, f = 100mhz v cb = 10v, i e = 0a, f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance
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